Electron Cyclotron Resonance CVD Planarization and Trench-Fill Processes

D. R. Denison; Chien Chiang; David B. Fraser

doi:10.1117/12.978055

30 January 1990 Electron Cyclotron Resonance CVD Planarization and Trench-Fill Processes

D. R. Denison, Chien Chiang, David B. Fraser

Proceedings Volume 1185, Dry Processing for Submicrometer Lithography; (1990) https://doi.org/10.1117/12.978055
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States

Abstract

An electron cyclotron resonance (ECR) generated oxygen plasma has been used for the chemical vapor deposition (CVD) of Si02 by reacting the oxygen plasma beam with adsorbed silane. This study was done to define the process window for the deposition of planarized Si02 over metal interconnect topographies with aspect ratio (ratio of step height to gap width) of up to 3 to 1 and for silicon trench fill with aspect ratio up to 5 to 1. It is found that the ratio of resputter rate provided by rf bias on the substrate to the deposition rate, typically 20 to 55 percent, determines the maximum aspect ratio space that can be filled. The system parameters considered are silane flow rate, oxygen to silane flow ratio, rf bias power density, and microwave power.

Citation Download Citation

D. R. Denison, Chien Chiang, and David B. Fraser "Electron Cyclotron Resonance CVD Planarization and Trench-Fill Processes", Proc. SPIE 1185, Dry Processing for Submicrometer Lithography, (30 January 1990); https://doi.org/10.1117/12.978055

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