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30 January 1990 Entrenched Metal Liftoff Using A Novel Bilayer Process
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Proceedings Volume 1185, Dry Processing for Submicrometer Lithography; (1990)
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
This paper will discuss the preparation and characterization of a modified photoresist and describe its use in a novel bilayer process. The modified photoresist solutions are prepared by dissolving enough cyclic phosphonitrilic chloride trimer, PNCT, in commercially available photoresist solutions to achieve phosphorus concentrations of 10 to 12 weight percent in the resulting films. FTNMR and FTIR data will be presented which demonstrate that the cyclic phosphonitrilic chloride trimer does not undergo chemical reaction with the components of the photoresist in the photoresist solutions or photoresist films. The exposure threshold of the PNCT modified photoresist films is 1.5 times greater than that of the unmodified films. Experimental data will be discussed which suggests the decrease in exposure threshold is the result of a relatively lower concentration of photoactive compound in the PNCT modified films. The PNCT modified films will be shown to provide resolution comparable to that of the unmodified photoresist films and yield a process window of better than 20%. A mechanism for the formation of the 02/N2 plasma resistant etch barrier formed during 02/N2 plasma etching will be discussed. Finally, a bilayer process which uses the PNCT modified photoresist in generating metal features entrenched in polyimide will be presented.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. D. DuBois, F. M. Tranjan, S. K. Jones, S. M. Bobbio, M. D. Kellam, R. G. Frieser, and A. D. Jones "Entrenched Metal Liftoff Using A Novel Bilayer Process", Proc. SPIE 1185, Dry Processing for Submicrometer Lithography, (30 January 1990);

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