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30 January 1990 Etch Resistance of Silicon Containing Polymers In Oxygen Plasma Chemistry
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Proceedings Volume 1185, Dry Processing for Submicrometer Lithography; (1990)
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
The etch resistance of silicon containing polymers has been investigated in a split cathode magnetron etch system designed and constructed at the Microelectronics Center of North Carolina (MCNC). Some of the work involved silylated resists and was presented in paper 1185-01 of this Symposium. In this paper we will discuss the etch resistance of an organo-silicon material (IC1, available from the Futurrex Corp.) which has been used extensively at MCNC. The etch rate of the material has been observed to be a function of both if power and substrate temperature. The tendency of the material is to be much more etch resistant at higher temperatures (etch rate approximately 15 Α/minute) and/or in cases where the rf power is low. The. indication is that an oxygen radical diffusion mechanism immediately beneath the etching surface is important in the stabilization process. Under these conditions, the etch rate ratio of nonsilicon organics to the silicon containing materials is more than 600:1. Conversely, low substrate temperature and large ion flux lead to very much larger etch rates (more than 400 Α/minute).
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. M. Bobbio, Susan K. Jones, Theodore G. Tessier, Bruce W. Dudley, Batia Cohen, Russell F. Jewett, and Arturo Morosoff "Etch Resistance of Silicon Containing Polymers In Oxygen Plasma Chemistry", Proc. SPIE 1185, Dry Processing for Submicrometer Lithography, (30 January 1990);

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