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The feasibility of using extreme ultra violet (EUV) lithography in high volume manufacturing makes the technology
a very strong candidate for sub 20nm patterning. However defect control remains a major challenge even today. The
aim of this paper is to understand propagation of the programmed defects present on the EUV mask to wafer to get an
understanding of how stochastic defects may evolve through processes and how we can mitigate it. The evolution of
the defects from mask to wafer post lithography and post etch has been studied both theoretically by calculating change
in defect area from a script on images taken with e-beam inspection and other metrology techniques like atomic force
microscopy. The end goal is to study the propagation of these programmed defects from post lithography to post etch
on wafer through parameters like defect area, defect sizes and stack height information[1][2].
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Poulomi Das, Alain Moussa, Christophe Beral, Mihir Gupta, Mohamed Saib, Sandip Halder, Anne Laure Charley, Philippe Leray, "Printability and propagation of stochastic defects through a study of defects programmed on EUV mask," Proc. SPIE 11854, International Conference on Extreme Ultraviolet Lithography 2021, 118540Z (19 October 2021); https://doi.org/10.1117/12.2602034