Resolution limit and photon flux dependency in EUV ptychography

H. Kim; R. Nebling; A. Dejkameh; S. Tao; I. Mochi; Y. Ekinci

doi:10.1117/12.2601246

12 October 2021 Resolution limit and photon flux dependency in EUV ptychography

H. Kim, R. Nebling, A. Dejkameh, S. Tao, I. Mochi, Y. Ekinci

Proceedings Volume 11855, Photomask Technology 2021; 1185506 (2021) https://doi.org/10.1117/12.2601246
Event: SPIE Photomask Technology + EUV Lithography, 2021, Online Only

Abstract

With the transition of EUV lithography to high volume manufacturing, EUV mask metrology has become a critical requirement. At PSI, we are developing RESCAN, a lensless actinic microscope dedicated to EUV mask inspection. RESCAN is based on coherent diffraction imaging (CDI), a method that reconstructs the complex image of the sample through its diffraction spectrum measured with a CCD detector. While this approach can overcome the cons and limitations of traditional optical imaging systems, in CDI, the quality of the recorded diffraction data is crucial for the reliable reconstruction of a high-resolution image. Ultimately, the signal-to-noise ratio of the recorded diffraction data depends on several parameters, such as the reflectance of the sample, the quantum efficiency of the detector, its full well capacity, and the intensity of the illumination. This paper investigates the optimal photon flux for RESCAN and analyzes the relation between the image quality and the EUV illumination intensity for a CDI-based imaging tool dedicated to EUV mask inspection and review.

Conference Presentation

Citation Download Citation

H. Kim, R. Nebling, A. Dejkameh, S. Tao, I. Mochi, and Y. Ekinci "Resolution limit and photon flux dependency in EUV ptychography", Proc. SPIE 11855, Photomask Technology 2021, 1185506 (12 October 2021); https://doi.org/10.1117/12.2601246

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