IN-SITU Monitoring Of OMVPE Of GaAs And Ga1-xAlxAs (x = 0.17) By Contactless Photoreflectance

H. Shen; Z. Hang; Fred H. Pollak; K. Capuder; Peter E. Norris

doi:10.1117/12.963914

5 February 1990 IN-SITU Monitoring Of OMVPE Of GaAs And Ga_1-xAl_xAs (x = 0.17) By Contactless Photoreflectance

H. Shen, Z. Hang, Fred H. Pollak, K. Capuder, Peter E. Norris

Proceedings Volume 1186, Surface and Interface Analysis of Microelectronic Materials Processing and Growth; (1990) https://doi.org/10.1117/12.963914
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States

Abstract

We have successfully applied the contactless, non-invasive electromodulation method of photoreflectance as an in-situ sensor of the OMVPE process. The direct gaps of GaAs and Ga_1-xAl_xAs(x = 0.17) have been measured as a function of temperature up to 690°C, in-situ, under actual OMVPE growth conditions, including a rotating substrate holder (~ 500 rev/min) and flowing gases.

Citation Download Citation

H. Shen, Z. Hang, Fred H. Pollak, K. Capuder, and Peter E. Norris "IN-SITU Monitoring Of OMVPE Of GaAs And Ga_1-xAl_xAs (x = 0.17) By Contactless Photoreflectance", Proc. SPIE 1186, Surface and Interface Analysis of Microelectronic Materials Processing and Growth, (5 February 1990); https://doi.org/10.1117/12.963914

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