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15 February 1990 In-Situ Spectroscopic Ellipsometry Investigation Of Ion Beam Damage: A Kinetic Study
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Proceedings Volume 1188, Multichamber and In-Situ Processing of Electronic Materials; (1990) https://doi.org/10.1117/12.963950
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
Abstract
An in-situ spectroscopic ellipsometer system was used to monitor damage and film formation occurring on the surface of silicon wafers during 1200 eV argon ion etching. Ellipsometric data were taken on two kinds of samples, one kind had only a native oxide and the other had a thermally grown oxide. Interpretation of ellipsometric spectra was carried out using derived optical models. The models reflect the state of the sample and allow quantification of the damage kinetics occurring at the substrate surface. Results from these experiments illustrate not only substrate damage formation, but also surface interface changes.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. W. Andrews, Y. Z. Hu, and E. A. Irene "In-Situ Spectroscopic Ellipsometry Investigation Of Ion Beam Damage: A Kinetic Study", Proc. SPIE 1188, Multichamber and In-Situ Processing of Electronic Materials, (15 February 1990); https://doi.org/10.1117/12.963950
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