Wide-wavelength range AlGaInAs laser array achieved by selective area growth on heterogenerous InP-on-Si wafer

C. Besancon; D. Néel; G. Cerulo; D. Make; N. I. Vaissiere; F. Pommereau; F. Fournel; L. Sanchez; C. Dupré; V. Muffato; J. Decobert

doi:10.1117/12.2602126

6 October 2021 Wide-wavelength range AlGaInAs laser array achieved by selective area growth on heterogenerous InP-on-Si wafer

C. Besancon, D. Néel, G. Cerulo, D. Make, N. I. Vaissiere, F. Pommereau, F. Fournel, L. Sanchez, C. Dupré, V. Muffato, J. Decobert

Author Affiliations +

Proceedings Volume 11880, Emerging Applications in Silicon Photonics II; 118800I (2021) https://doi.org/10.1117/12.2602126
Event: SPIE Photonex, 2021, Glasgow, United Kingdom

Abstract

In this work, we present an advanced heterogeneous integration scheme which consists in integrating a thin InP layer by wafer-bonding onto a silicon wafer (InPoSi) on which a regrowth step of III-V materials is implemented. Vertical p-i-n AlGaInAs lasers obtained from a single Selective Area Growth (SAG) step on InPoSi were fabricated. Thanks to SAG, the AlGaInAs-MQW structures successfully cover a PL range of 160 nm in the C+L band. Based on these structures, a 5- channel laser array was fabricated. The latter successfully covers a 155 nm-wide spectral band from 1515 nm to 1670 nm with a maximum output power of 20 mW under continuous-wave regime at 20°C. High thermal stability up to 70°C is demonstrated with a characteristic temperature of 69°C for the lasers emitting from 1515 nm to 1600 nm.

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Citation Download Citation

C. Besancon, D. Néel, G. Cerulo, D. Make, N. I. Vaissiere, F. Pommereau, F. Fournel, L. Sanchez, C. Dupré, V. Muffato, and J. Decobert "Wide-wavelength range AlGaInAs laser array achieved by selective area growth on heterogenerous InP-on-Si wafer", Proc. SPIE 11880, Emerging Applications in Silicon Photonics II, 118800I (6 October 2021); https://doi.org/10.1117/12.2602126

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