A New Method For Evaluating Temperature Distribution By Using Si + + B + Implantation

Shigeo Onishi; Kenichi Tanaka; Keizo Sakiyama

doi:10.1117/12.963961

6 April 1990 A New Method For Evaluating Temperature Distribution By Using Si ⁺ + B ⁺ Implantation

Shigeo Onishi, Kenichi Tanaka, Keizo Sakiyama

Proceedings Volume 1189, Rapid Isothermal Processing; (1990) https://doi.org/10.1117/12.963961
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States

Abstract

A method for evaluating temperature distributions between 400 Ã‚Â°C and 600 Ã‚Â°C have been studied by utilizing Si+ + B+ implantation. From the measurement of the sheet resistance(ps ), the equations shown in ps =3.8x10-8( t )-0.6 exp(Ea / kT) (Furnace anneal), Ps = 9.0x10-9( t )-0.5 exp( Ea / kT) (RTA) are obtained. And an obtained activation energy ( Ea) of 1.9eV is equivalent to that of solid phase epitaxial regrowth. From the distribution of the sheet resistance, the estimation of the temperature distribution between 400Ã‚Â°C and 600 Ã‚Â°C becomes possible for annealing times from lsec. to lhour.

Citation Download Citation

Shigeo Onishi, Kenichi Tanaka, and Keizo Sakiyama "A New Method For Evaluating Temperature Distribution By Using Si ⁺ + B ⁺ Implantation", Proc. SPIE 1189, Rapid Isothermal Processing, (6 April 1990); https://doi.org/10.1117/12.963961

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