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6 April 1990 A New Method For Evaluating Temperature Distribution By Using Si + + B + Implantation
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Proceedings Volume 1189, Rapid Isothermal Processing; (1990) https://doi.org/10.1117/12.963961
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
Abstract
A method for evaluating temperature distributions between 400 °C and 600 °C have been studied by utilizing Si+ + B+ implantation. From the measurement of the sheet resistance(ps ), the equations shown in ps =3.8x10-8( t )-0.6 exp(Ea / kT) (Furnace anneal), Ps = 9.0x10-9( t )-0.5 exp( Ea / kT) (RTA) are obtained. And an obtained activation energy ( Ea) of 1.9eV is equivalent to that of solid phase epitaxial regrowth. From the distribution of the sheet resistance, the estimation of the temperature distribution between 400°C and 600 °C becomes possible for annealing times from lsec. to lhour.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shigeo Onishi, Kenichi Tanaka, and Keizo Sakiyama "A New Method For Evaluating Temperature Distribution By Using Si + + B + Implantation", Proc. SPIE 1189, Rapid Isothermal Processing, (6 April 1990); https://doi.org/10.1117/12.963961
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