Fabrication of superior oxynitride ultrathin MOS gate dielectrics for ULSI technology by reactive rapid thermal processing

D. L. Kwong; G. Q. Lo; W. C. Ting; P. C. Li

doi:10.1117/12.963970

6 April 1990 Fabrication of superior oxynitride ultrathin MOS gate dielectrics for ULSI technology by reactive rapid thermal processing

D. L. Kwong, G. Q. Lo, W. C. Ting, P. C. Li

Author Affiliations +

Proceedings Volume 1189, Rapid Isothermal Processing; (1990) https://doi.org/10.1117/12.963970
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States

Abstract

In this paper, superior ultrathin oxynitride gate dielectrics have been fabricated using reactive rapid thermal processing, and their chemical, structural, and electrical properties have been studied and characterized. The techniques which are employed for oxynitride gate dielectrics formation include (i) in-situ multiple RTP of both thermal oxides and low-pressure chemical-vapor-deposited oxides in reactive gas ambient, and (ii) a novel in-situ multi-step deposition/growth rapid thermal processing chemical vapor deposition for oxide/nitride/oxide (ONO) stacked layer formation.

Citation Download Citation

D. L. Kwong, G. Q. Lo, W. C. Ting, and P. C. Li "Fabrication of superior oxynitride ultrathin MOS gate dielectrics for ULSI technology by reactive rapid thermal processing", Proc. SPIE 1189, Rapid Isothermal Processing, (6 April 1990); https://doi.org/10.1117/12.963970

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