High Quality Si and Si-based Heterostructures And Devices Produced By Rapid Thermal Chemical Vapor Deposition (RTCVD)

Martin L. Green; H. Temkin; D. Brasen

doi:10.1117/12.963963

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6 April 1990 High Quality Si and Si-based Heterostructures And Devices Produced By Rapid Thermal Chemical Vapor Deposition (RTCVD)

Martin L. Green, H. Temkin, D. Brasen

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Proceedings Volume 1189, Rapid Isothermal Processing; (1990) https://doi.org/10.1117/12.963963
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States

Abstract

CVD is a well established deposition technology that is firmly embedded in the integrated processing line. Because CVD is a production worthy technology, there are advantages in using it to deposit state-of-the-art Si and Si heterostructural films. The requirements for such films are, among others, that they be thin (<100X), epitaxial with very low defect density, and that they be grown at low temperatures. These characteristics will ensure that there will be adequate carrier transport, resulting in fast devices, that the films will not significantly interdiffuse, and that metastable structures will be preserved.

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Martin L. Green, H. Temkin, and D. Brasen "High Quality Si and Si-based Heterostructures And Devices Produced By Rapid Thermal Chemical Vapor Deposition (RTCVD)", Proc. SPIE 1189, Rapid Isothermal Processing, (6 April 1990); https://doi.org/10.1117/12.963963

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