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6 April 1990 Temperature Non-Uniformities During Rapid Thermal Processing Of Patterned Wafers
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Proceedings Volume 1189, Rapid Isothermal Processing; (1990) https://doi.org/10.1117/12.963962
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
Abstract
During rapid thermal processing, temperature non-uniformities are created due to patterned layers on the wafers. A theoretical calculation of this non-uniformity is presented. Results are in good agreement with previously reported experimental results. The influence of the RTP-system design, concerning lamp-system, window-type and chamber reflectivity is studied. Also, the influence of pattern size and steady-state temperature is discussed. For the technological important case of Si02 patterns on Si, specific examples are calculated. As a conclusion it is shown that when the patterns are on the front-side, heating of the wafer should be restricted to the back-side of the wafer, while the front-side of the wafer should face a highly-reflecting chamber.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter Vandenabeele and Karen Maex "Temperature Non-Uniformities During Rapid Thermal Processing Of Patterned Wafers", Proc. SPIE 1189, Rapid Isothermal Processing, (6 April 1990); https://doi.org/10.1117/12.963962
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