Effect of high-energy electron irradiation on the electronic properties of beta-gallium oxide

Thi-Huong Dang; Marcin Konczykowski; Viatcheslav I. Safarov; Elie Hammou; Lucia Romero Vega; Nadège Ollier; Romain Grasset; Antonino Alessi; Henri-Jean Drouhin; Henri Jaffrès; Valery Yu. Davydov; Agnieszka Wołoś; David J. Rogers; Vinod E. Sandana; Philippe Bove; Féréchteh H. Teherani

doi:10.1117/12.2622559

5 March 2022 Effect of high-energy electron irradiation on the electronic properties of β-gallium oxide

Thi-Huong Dang, Marcin Konczykowski, Viatcheslav I. Safarov, Elie Hammou, Lucia Romero Vega, Nadège Ollier, Romain Grasset, Antonino Alessi, Henri-Jean Drouhin, Henri Jaffrès, Valery Yu. Davydov, Agnieszka Wołoś, David J. Rogers, Vinod E. Sandana, Philippe Bove, Féréchteh H. Teherani

Author Affiliations +

Proceedings Volume 12002, Oxide-based Materials and Devices XIII; 1200207 (2022) https://doi.org/10.1117/12.2622559
Event: SPIE OPTO, 2022, San Francisco, California, United States

Abstract

Irradiation with high-energy electrons (HEE) at cryogenic temperatures is a subtle tool for shaping matter. Unlike irradiation with heavy particles, e.g. protons, neutrons, or ions, HEE irradiation produces very low local damage generating exclusively point lattice defects. In the interaction process, the primary high-energy electron transfers a minute quantity of energy to a lattice ion, just enough for displacing it from its lattice site. The concentration of induced vacancies depends on the irradiation dose and in this way can be carefully adjusted. Since the lattice defects can act as donor or acceptor states in semiconductors, electron irradiation enables accurately-controlled compensation of electrically-active impurities introduced in a semiconductor crystal during growth. In this article, we present a study of the evolution of electronic properties of β-gallium oxide with step-by-step compensation of initial n-type doping through controlled introduction of point defects (gallium vacancies) produced by a 2.5-MeV electron beam. Our analysis relies on a set of electron paramagnetic resonance, luminescence, and transport data obtained at different temperatures.

Conference Presentation

Citation Download Citation

Thi-Huong Dang, Marcin Konczykowski, Viatcheslav I. Safarov, Elie Hammou, Lucia Romero Vega, Nadège Ollier, Romain Grasset, Antonino Alessi, Henri-Jean Drouhin, Henri Jaffrès, Valery Yu. Davydov, Agnieszka Wołoś, David J. Rogers, Vinod E. Sandana, Philippe Bove, and Féréchteh H. Teherani "Effect of high-energy electron irradiation on the electronic properties of β-gallium oxide", Proc. SPIE 12002, Oxide-based Materials and Devices XIII, 1200207 (5 March 2022); https://doi.org/10.1117/12.2622559

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available