A recently introduced novel concept ellipsometry, characterized by its unique derivation process of directly extracting the polarization information from the hologram image on pupil plane, has been evaluated experimentally targeting for the application to OCD and overlay tools. With an improvement of splitting the hologram on the pupil, this self-interferometric pupil ellipsometry (SIPE) has gained the capability of measuring all of Stokes parameters (S0-S3) throughout the incident angle of 0 to 72 degrees with omnidirectional orientation. A prototype system incorporating SIPE technology has been fabricated to conduct the performance test with patterned test samples for overlay and CD evaluation, the result of which exhibits the sufficient sensitivity to dimension variation and superior repeatability for practical use. The measurement of thousands of ellipsometric data on pupil only takes tens of milliseconds at the most, realized by leveraging the advantages of self-interferometry that does not have any rotating elements in optics. The experimental result demonstrates the consistency with the simulation results based on TEM data within entire pupil. In the front-line of advanced semiconductor manufacturing, the main obstacles to OCD application, low sensitivity and parameter coupling, have been evaluated, which indicates good prospects with SIPE technology.
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