Absolute overlay measurement based on voltage contrast defect inspection with programmed misalignments for DRAM devices

Moosong Lee; Jinsun Kim; Dohyeon Park; Yeeun Han; Junseong Yoon; Seung Yoon Lee; Chan Hwang; Achim Woessner; Cyrus E. Tabery; Miao Wang; Antonio Corradi; Young-Hoon Song; Yun-A Sung; Thomas Kim; Aileen Soco; Jason Kim; Chih-Hung Hsieh

doi:10.1117/12.2626721

26 May 2022 Absolute overlay measurement based on voltage contrast defect inspection with programmed misalignments for DRAM devices

Moosong Lee, Jinsun Kim, Dohyeon Park, Yeeun Han, Junseong Yoon, Seung Yoon Lee, Chan Hwang, Achim Woessner, Cyrus E. Tabery, Miao Wang, Antonio Corradi, Young-Hoon Song, Yun-A Sung, Thomas Kim, Aileen Soco, Jason Kim, Chih-Hung Hsieh

Author Affiliations +

Proceedings Volume 12053, Metrology, Inspection, and Process Control XXXVI; 1205315 (2022) https://doi.org/10.1117/12.2626721
Event: SPIE Advanced Lithography + Patterning, 2022, San Jose, California, United States

Abstract

Improvements on on-cell overlay is necessary to suppress misalign induced defects. Precise and accurate on-cell overlay measurements are strongly demanded, however, we are facing limitations on conventional CD-SEM based on-cell overlay measurements, such as unexpected overlay bias. To mitigate drawbacks of top view based on-cell overlay measurements, we present voltage contrast based overlay measurements (VCBO) which utilize specially designed cell patterns with combinations of programmed misalignments on scribe lanes, measured by defect inspection equipment, eP5 [1]. We successfully demonstrate the first defect based overlay measurement on DRAM device and a potential of 27% in-die overlay gain is shown. Also, we display overlay process margin at about ~1000 points on wafer. As a definite standard of on-product overlay measurement, this technology will be used for advanced misreading correction (MRC). We believe that the technique would be widely used and become necessary in near future.

Conference Presentation

Citation Download Citation

Moosong Lee, Jinsun Kim, Dohyeon Park, Yeeun Han, Junseong Yoon, Seung Yoon Lee, Chan Hwang, Achim Woessner, Cyrus E. Tabery, Miao Wang, Antonio Corradi, Young-Hoon Song, Yun-A Sung, Thomas Kim, Aileen Soco, Jason Kim, and Chih-Hung Hsieh "Absolute overlay measurement based on voltage contrast defect inspection with programmed misalignments for DRAM devices", Proc. SPIE 12053, Metrology, Inspection, and Process Control XXXVI, 1205315 (26 May 2022); https://doi.org/10.1117/12.2626721

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