Lateral diffusion studies by laser ablation microprobe mass spectrometry

Lou Ann Heimbrook

doi:10.1117/12.17869

1 July 1990 Lateral diffusion studies by laser ablation microprobe mass spectrometry

Lou Ann Heimbrook

Proceedings Volume 1208, Laser Photoionization and Desorption Surface Analysis Techniques; (1990) https://doi.org/10.1117/12.17869
Event: OE/LASE '90, 1990, Los Angeles, CA, United States

Abstract

This paper examines the analytical capabilities and applications of Laser Ablation Microprobe Mass Spectrometry (LAMMS). The technique and instrumentation will be described along with the application of LAMMS to investigate dopant lateral diffusion problems in insulating and noninsulating materials. This work focuses on two material examples: p⁺ and n⁺ diffusion within 3 μm device lines in Ta and Co silicides; and trace element and dopant migration in optical fibers. The results show the capability of LAMMS to routinely achieve 1-3 μm lateral resolution with high dopant sensitivity on materials with extremely different optical properties.

Citation Download Citation

Lou Ann Heimbrook "Lateral diffusion studies by laser ablation microprobe mass spectrometry", Proc. SPIE 1208, Laser Photoionization and Desorption Surface Analysis Techniques, (1 July 1990); https://doi.org/10.1117/12.17869

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