Presentation + Paper
27 May 2022 Determination of doping polarity of unintentionally doped antimonide avalanche photodiodes on InP substrate
Mariah Schwartz, Sri Harsha Kodati, SeungHyun Lee, Hyemin Jung, Dekang Chen, Chris Grein, T. J. Ronningen, Joe Campbell, Sanjay Krishna
Author Affiliations +
Abstract
Background doping polarity type is a critical parameter for avalanche photodiode performance. We demonstrated a technique using capacitance-voltage (CV) measurements on double mesa structures with a p-i-n or n-i-p homojunctions to determine the polarity type of the unintentionally doped intrinsic (uid) region. CV measurements scale with the size of the mesa and enable design flexibility in producing variable top or bottom mesa diameters. We designed and tested AlGaAsSb and AlInAsSb structures and performed measurements at varying temperatures. Measurements varied with the top mesa, indicating the p-n junction is located between the p-region and the uid region, therefore it is n-type.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mariah Schwartz, Sri Harsha Kodati, SeungHyun Lee, Hyemin Jung, Dekang Chen, Chris Grein, T. J. Ronningen, Joe Campbell, and Sanjay Krishna "Determination of doping polarity of unintentionally doped antimonide avalanche photodiodes on InP substrate", Proc. SPIE 12107, Infrared Technology and Applications XLVIII, 121070G (27 May 2022); https://doi.org/10.1117/12.2622140
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KEYWORDS
Capacitance

Doping

Avalanche photodetectors

Avalanche photodiodes

Signal to noise ratio

Switching

Aluminum

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