Optoelectronic integration schemes for switching and computing applications

Pallab Bhattacharya

doi:10.1117/12.18048

1 July 1990 Optoelectronic integration schemes for switching and computing applications

Pallab Bhattacharya

Proceedings Volume 1215, Digital Optical Computing II; (1990) https://doi.org/10.1117/12.18048
Event: OE/LASE '90, 1990, Los Angeles, CA, United States

Abstract

The properties of a GaAs-based integrated multiquantum well device capable of optoelectronic amplification are described. The device consists of a heterostructure bipolar transistor acting as a controller and a multiquantum well Stark effect p-i-n modulator grown in single step epitaxy. The integrated device also has cascadable properties and fan-out and fan-in values of 8 and 6, respectively, are measured.

Citation Download Citation

Pallab Bhattacharya "Optoelectronic integration schemes for switching and computing applications", Proc. SPIE 1215, Digital Optical Computing II, (1 July 1990); https://doi.org/10.1117/12.18048

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