Paper
1 May 1990 780-nm high-power laser diode fabricated by metal organic chemical vapor deposition technique
Yoichiro Ohta, Tetsuya Yagi, Hitoshi Kagawa, Hideyo Higuchi, Kuniki Tamari, Yuzo Kashimoto
Author Affiliations +
Abstract
The 780nm 35mW I2SPB lasers(Inverted Inner Stripe Laser with a p- GaAs Buffer Layer) with a thin active layer have been successflly developed by employing MOCVD. Accelerated aging tests on the ISPB lasers with the cavity length of 400iim at 60 °C, 30mW project lifetimes (MTTF) greater than l0000hrs. The narrow standard deviations of beam divergences parallel and perpendicullar to the junction plane, respectively 0.18 and O.2Odeg, are achieved. The small astigmatic distance less than 6iim and the high optical S/N ratio more than 65dB (at f=2OkHz, BW=300Hz and P=3OmW) are obtained. These exellent results indicate that the I2SPB lasers are available for the Magneto-Optical Disk (MOD) applications.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoichiro Ohta, Tetsuya Yagi, Hitoshi Kagawa, Hideyo Higuchi, Kuniki Tamari, and Yuzo Kashimoto "780-nm high-power laser diode fabricated by metal organic chemical vapor deposition technique", Proc. SPIE 1219, Laser Diode Technology and Applications II, (1 May 1990); https://doi.org/10.1117/12.18249
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Cited by 2 scholarly publications.
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KEYWORDS
Laser applications

Metalorganic chemical vapor deposition

Diodes

Fabrication

Gallium arsenide

High power lasers

Cladding

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