Characteristics  of high-power, InGaAs/AlGaAs laser diodes

David F. Welch; Christian F. Schaus; Shang Zhu Sun; Max Cardinal; William S. Streifer; Donald R. Scifres

doi:10.1117/12.18238

1 May 1990 Characteristics of high-power, InGaAs/AlGaAs laser diodes

David F. Welch, Christian F. Schaus, Shang Zhu Sun, Max Cardinal, William S. Streifer, Donald R. Scifres

Proceedings Volume 1219, Laser Diode Technology and Applications II; (1990) https://doi.org/10.1117/12.18238
Event: OE/LASE '90, 1990, Los Angeles, CA, United States

Abstract

Both gain-guided and index-guided InGaAs/AlGaAs pseudomorphic laser diodes have been fabricated and tested. The characteristics are similar to lattice-matched GaAs/AlGaAs lase diodes in that the threshold current, differential efficiency, and maximum output powers are comparable. Output powers of 3 W CW have been achieved at 960 nm from a 100 micron aperture laser. An increase in the gain coefficient by 30 percent has been measured in the lasers with strained active regions. Single-mode lasers have also been fabricated which operate to 350 mW, 180 mW in a single transverse and longitudinal mode.

Citation Download Citation

David F. Welch, Christian F. Schaus, Shang Zhu Sun, Max Cardinal, William S. Streifer, and Donald R. Scifres "Characteristics of high-power, InGaAs/AlGaAs laser diodes", Proc. SPIE 1219, Laser Diode Technology and Applications II, (1 May 1990); https://doi.org/10.1117/12.18238

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