Reliability test of high-power semiconductor laser for intersatellite link

Nimia ChenShow Wang; K. G. Lu; Hossein Firouzi; K. Ouyang; C. J. Hwang; J. L. Stevenson; S. Akiba; Robert A. Peters

doi:10.1117/12.18250

1 May 1990 Reliability test of high-power semiconductor laser for intersatellite link

Nimia ChenShow Wang, K. G. Lu, Hossein Firouzi, K. Ouyang, C. J. Hwang, J. L. Stevenson, S. Akiba, Robert A. Peters

Proceedings Volume 1219, Laser Diode Technology and Applications II; (1990) https://doi.org/10.1117/12.18250
Event: OE/LASE '90, 1990, Los Angeles, CA, United States

Abstract

A total of 64 high power laser diodes with wide stripe and multistripe structures have been selected for long term pulsed reliability testing at 120 Mbits/s with peak output power of 150 mW. This data rate and peak power were selected for a potential intersatellite communication link between geosynchronous satellites. The laser diodes were selected through two stringent burn-in tests. First they were burned-in at 100 C for 100 hours, biased below threshold. The second burn-in was performed at 70 C with lasers operating at a peak power of 150 mW, 120 Mbits/s, 50 percent duty cycle for 100 hours. Only those lasers that did not change threshold current more than 5 percent were selected for the life test. The laser diodes were fully characterized before the life test. The electrooptical, spectra, spatial and modulation characteristics of the laser diodes are presented as well as the details of the burn-in processes, the life test results, and failure mechanisms of the lasers.

Citation Download Citation

Nimia ChenShow Wang, K. G. Lu, Hossein Firouzi, K. Ouyang, C. J. Hwang, J. L. Stevenson, S. Akiba, and Robert A. Peters "Reliability test of high-power semiconductor laser for intersatellite link", Proc. SPIE 1219, Laser Diode Technology and Applications II, (1 May 1990); https://doi.org/10.1117/12.18250

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