Towards terahertz optopair based on AlGaN/GaN HEMTs

Maciej Sakowicz; Maksym Dub; Pavlo Sai; Dmitro B. But; Grzegorz Cywinski; Justinas Jorudas; Artur Šimukovic; Pawel Prystawko; Simonas Indrišiunas; Vitalij Kovalevskij; Sergey Rumyantsev; Irmantas Kašalynas; Wojciech Knap

doi:10.1117/12.2632980

3 October 2022 Towards terahertz optopair based on AlGaN/GaN HEMTs

Maciej Sakowicz, Maksym Dub, Pavlo Sai, Dmitro B. But, Grzegorz Cywinski, Justinas Jorudas, Artur Šimukovic, Pawel Prystawko, Simonas Indrišiunas, Vitalij Kovalevskij, Sergey Rumyantsev, Irmantas Kašalynas, Wojciech Knap

Author Affiliations +

Proceedings Volume 12230, Terahertz Emitters, Receivers, and Applications XIII; 1223003 (2022) https://doi.org/10.1117/12.2632980
Event: SPIE Optical Engineering + Applications, 2022, San Diego, California, United States

Abstract

We present investigations of the fin-shaped GaN/AlGaN field effect transistors with two lateral Schottky barrier gates exactly placed on the edges of the fin-shaped transistor channel. We call this kind of FinFET modification the EdgeFET. It allowed us to efficiently control the current flow in two-dimensional electron gas conduction channel. We present experimental data of sub-THz detection by EdgeFETs. Control of the side gates allows changing the width of two-dimensional electron gas and forming a wire, as we expect should be beneficial for observation of terahertz plasma wave resonances. This paves the way towards future terahertz optopair using high-quality factor plasma wave resonances, for which it is necessary to eliminate oblique modes. We report also on the high-voltage, noise, and radio frequency (RF) performances of aluminium gallium nitride/gallium nitride (AlGaN/GaN) on silicon carbide (SiC) devices without any GaN buffer. Such a GaN–SiC hybrid material was developed in order to improve thermal management and to reduce trapping effects should be beneficial for observation of resonant emission.

Conference Presentation

Citation Download Citation

Maciej Sakowicz, Maksym Dub, Pavlo Sai, Dmitro B. But, Grzegorz Cywinski, Justinas Jorudas, Artur Šimukovic, Pawel Prystawko, Simonas Indrišiunas, Vitalij Kovalevskij, Sergey Rumyantsev, Irmantas Kašalynas, and Wojciech Knap "Towards terahertz optopair based on AlGaN/GaN HEMTs", Proc. SPIE 12230, Terahertz Emitters, Receivers, and Applications XIII, 1223003 (3 October 2022); https://doi.org/10.1117/12.2632980

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
PRESENTATION

WATCH
PRESENTATION SAVE TO MY LIBRARY

GET CITATION

KEYWORDS

Field effect transistors

Plasma

Terahertz radiation

Transistors

Fin field effect transistors

Gallium nitride

Silicon carbide

Show All Keywords

Keywords/Phrases

Search In:

Publication Years