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1 July 1990 New advancements in charge-coupled device technology: subelectron noise and 4096 x 4096 pixel CCDs
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Proceedings Volume 1242, Charge-Coupled Devices and Solid State Optical Sensors; (1990) https://doi.org/10.1117/12.19452
Event: Electronic Imaging: Advanced Devices and Systems, 1990, Santa Clara, CA, United States
Abstract
This paper reports on two new advancements in CCD technology. The first area of development has produced a special purpose CCD designed for ultra low-signal level imaging and spectroscopy applications that require sub-electron read noise floors. A nondestructive output circuit operating near its 1/f noise regime is clocked in a special manner to read a single pixel multiple times. Off-chip electronics average the multiple values, reducing the random noise by the square-root of the number of samples taken. Noise floors below 0.5 electrons rms are reported. The second development involves the design and performance of a high resolution imager of 4096 x 4096 pixels, the largest CCD manufactured in terms of pixel count. The device utilizes a 7.5-micron pixel fabricated with three-level poly-silicon to achieve high yield.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James R. Janesick, Tom S. Elliott, Arsham Dingiziam, Richard A. Bredthauer, Charles E. Chandler, James A. Westphal, and James E. Gunn "New advancements in charge-coupled device technology: subelectron noise and 4096 x 4096 pixel CCDs", Proc. SPIE 1242, Charge-Coupled Devices and Solid State Optical Sensors, (1 July 1990); https://doi.org/10.1117/12.19452
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