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1 July 1990 Signal-to-noise ratio analysis of charge-coupled device imagers
Peter D. Burns
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Proceedings Volume 1242, Charge-Coupled Devices and Solid State Optical Sensors; (1990) https://doi.org/10.1117/12.19454
Event: Electronic Imaging: Advanced Devices and Systems, 1990, Santa Clara, CA, United States
Abstract
We start with a physical model1 of the detector and associated electronics. Using previously derived expressions for the MTF and noise power spectrum, we extend the use of the model to include a signal-to-noise metric, the noise equivalent quanta (NEQ). This approach is then applied in a design example relevant to film and document scanning.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
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Peter D. Burns "Signal-to-noise ratio analysis of charge-coupled device imagers", Proc. SPIE 1242, Charge-Coupled Devices and Solid State Optical Sensors, (1 July 1990); https://doi.org/10.1117/12.19454
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