Charles Smithhttps://orcid.org/0009-0000-0082-0840,1 Jaroslaw Kirdoda,1 Derek C. S. Dumas,1 Conor Coughlan,1 Charlie McCarthy,1 Hannah Mowbray,1 Muhammad Mirza,1 Fiona Fleming,2 Xin Yi,2 Lisa Saalbach,2 Gerald S. Buller,2 Douglas J. Paul,1 Ross W. Millar1
1Univ. of Glasgow (United Kingdom) 2Heriot-Watt Univ. (United Kingdom)
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Single photon avalanche diodes (SPADs) are semiconductor photodiode detectors capable of detecting individual photons, typically with sub-ns precision timing. We have previously demonstrated novel pseudo-planar germanium-on-silicon SPADs with absorption into the short-wave infrared, which promise lower costs and potentially easier CMOS integration compared to III-V SPADs. Here we have simulated the dark count rate of these devices, using a custom solver for McIntyre’s avalanche model and a trap assisted tunnelling generation model. Calibration and fitting have been performed using experimental data and the results have highlighted areas in which the technology can be optimised.
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Charles Smith, Jaroslaw Kirdoda, Derek C. S. Dumas, Conor Coughlan, Charlie McCarthy, Hannah Mowbray, Muhammad Mirza, Fiona Fleming, Xin Yi, Lisa Saalbach, Gerald S. Buller, Douglas J. Paul, Ross W. Millar, "Simulation and design optimization of germanium-on-silicon single photon avalanche diodes," Proc. SPIE 12426, Silicon Photonics XVIII, 124260S (13 March 2023); https://doi.org/10.1117/12.2650154