Mechanisms limiting the operation time of UVB Al(In)GaN quantum well light emitters

Jens W. Tomm; Jan Ruschel; Hyun Kyong Cho; Sven Einfeldt

doi:10.1117/12.2646579

15 March 2023 Mechanisms limiting the operation time of UVB Al(In)GaN quantum well light emitters

Jens W. Tomm, Jan Ruschel, Hyun Kyong Cho, Sven Einfeldt

Proceedings Volume 12440, Novel In-Plane Semiconductor Lasers XXII; 1244008 (2023) https://doi.org/10.1117/12.2646579
Event: SPIE OPTO, 2023, San Francisco, California, United States

Abstract

The aging behavior of Quantum Wells (QW) in UVB-emitting devices is analyzed. In addition to the standard lifetime tests, we measured the non-equilibrium carrier lifetime in the QW by time-resolved photoluminescence (PL) and performed spatially resolved PL measurements. In this way, we distinguish the different contributions that lead to a decrease in the emission power of the device. We show that the aging-induced increase of spatial inhomogeneities of the PL also affects the transient PL behavior.

Conference Presentation

Citation Download Citation

Jens W. Tomm, Jan Ruschel, Hyun Kyong Cho, and Sven Einfeldt "Mechanisms limiting the operation time of UVB Al(In)GaN quantum well light emitters", Proc. SPIE 12440, Novel In-Plane Semiconductor Lasers XXII, 1244008 (15 March 2023); https://doi.org/10.1117/12.2646579

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