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Si has multiple attractive semiconductive properties to be used as a radiation sensor material in photon counting detectors. Additionally, the abundance and mature manufacturing technologies of Si have made high-purity Si readily available at low costs. Among physical interactions between x-rays and Si, the majority are expected to be Compton and Rayleigh scatterings due to the low atomic number of Si. In this work, the percentage and destinies of scattered x-ray photons were quantified both experimentally and numerically. The results have guided us to optimize the Si PCD configuration for more efficient utilization of the side-scattered photons.
Ke Li,Christian De Caro,Ran Zhang, andGuang-Hong Chen
"Intra-detector x-ray scatterings in edge-on irradiated silicon photon counting CT: how to harvest information from scattered photons", Proc. SPIE 12463, Medical Imaging 2023: Physics of Medical Imaging, 124630D (7 April 2023); https://doi.org/10.1117/12.2654227
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Ke Li, Christian De Caro, Ran Zhang, Guang-Hong Chen, "Intra-detector x-ray scatterings in edge-on irradiated silicon photon counting CT: how to harvest information from scattered photons," Proc. SPIE 12463, Medical Imaging 2023: Physics of Medical Imaging, 124630D (7 April 2023); https://doi.org/10.1117/12.2654227