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NAND flash memory has wide applications, from mobile phones to data centers. There is an insatiable need for Flash storage. NAND is the most exciting semiconductor memory around with continued scaling. The capital intensity and competitive landscape continues to fuel many innovations in flash architecture and its applications. This talk will give a brief introduction to NAND architecture changes in 3D NAND flash as it continues its aggressive physical scaling by growing more layers. NAND scaling is expensive and capital efficiency is one of the key metrics to be considered. There are many innovations in 3D NAND architecture, with the ongoing drive to shrink die size and drive the NAND roadmap for the future. On the application side, we will look at zone named space (ZNS), a new system architecture that reduces the “wear and tear”on flash memory and which also helps adaptation of 4 bits per cell (QLC) in SSD.
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Yan Li, "3D NAND Flash and its application," Proc. SPIE 12495, DTCO and Computational Patterning II, 124950H (30 April 2023); https://doi.org/10.1117/12.2658812