Comparison of metrology methods for measurement of micron and submicron resist and polysilicon features

Susan K. Jones; Robert L. Van Asselt; John C. Russ; Bruce W. Dudley; Gloria Johnson; Roelof W. Wijnaendts van Resandt; Peter R. Herman

doi:10.1117/12.20032

1 June 1990 Comparison of metrology methods for measurement of micron and submicron resist and polysilicon features

Susan K. Jones, Robert L. Van Asselt, John C. Russ, Bruce W. Dudley, Gloria Johnson, Roelof W. Wijnaendts van Resandt, Peter R. Herman

Author Affiliations +

Proceedings Volume 1261, Integrated Circuit Metrology, Inspection, and Process Control IV; (1990) https://doi.org/10.1117/12.20032
Event: Microlithography '90, 1990, San Jose, CA, United States

Abstract

As the feature size requirements of TJLSI devices continue to decrease below the practical limits of standard optical metrology, alternate measurement methodologies will be utilized on a more routine basis during device fabrication. A series of linewidth measurements of photoresist on polysilicon and etched polysilicon equal line/space gratings having nominal linewidths ranging from 0.45 jim to 2.0 p.m has been performed using a variety of metrology techniques. Features fabricated using a 248 nm deep UV laser stepper and 405 nm near UV stepper were used in the experiments. Top-down low-voltage SEM measurements, electrical resistance measurements, confocal ultraviolet laser scanning microscope profiles, and SEM measurements on cleaved cross sections are compared. By measuring a large number of points on each line and die, the variability of the linewidths themselves, the measurement precision of the techniques, and the measurement bias between the methods are isolated. Experimental procedures and measurement techniques are described along with the resultant data.

Citation Download Citation

Susan K. Jones, Robert L. Van Asselt, John C. Russ, Bruce W. Dudley, Gloria Johnson, Roelof W. Wijnaendts van Resandt, and Peter R. Herman "Comparison of metrology methods for measurement of micron and submicron resist and polysilicon features", Proc. SPIE 1261, Integrated Circuit Metrology, Inspection, and Process Control IV, (1 June 1990); https://doi.org/10.1117/12.20032

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