Laser-ablated resist via inspection

Charles E. Benjamin; George J. Collini; Ricardo A. Martinez

doi:10.1117/12.20078

1 June 1990 Laser-ablated resist via inspection

Charles E. Benjamin, George J. Collini, Ricardo A. Martinez

Proceedings Volume 1261, Integrated Circuit Metrology, Inspection, and Process Control IV; (1990) https://doi.org/10.1117/12.20078
Event: Microlithography '90, 1990, San Jose, CA, United States

Abstract

193 run excimer laser photo-ablation of kerf patterns offers a non-destructive Method of characterizing high-aspect-ratio vias in resist and polymer stacks, for process control and potential rework decisions. Current optical and SEM approaches, including tilt-stage, do not offer sufficient information as diameters approach 0.5 urn in 1 urn thick stacks. Unlike the double-exposed photo-cleave method described by Yang, et al, this technique sections isolated vias after developing, representing actual product structures. Tilt-stage SEN inspection is then used to observe the details of the contour, to assure complete opening and proper dimensions.

Citation Download Citation

Charles E. Benjamin, George J. Collini, and Ricardo A. Martinez "Laser-ablated resist via inspection", Proc. SPIE 1261, Integrated Circuit Metrology, Inspection, and Process Control IV, (1 June 1990); https://doi.org/10.1117/12.20078

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available