Dry development of the top imaging layer for bilayer system in the down stream of O2/CF4 plasma

Takushi Motoyama; Satoru Mihara; Naomichi Abe

doi:10.1117/12.20096

1 June 1990 Dry development of the top imaging layer for bilayer system in the down stream of O2/CF4 plasma

Takushi Motoyama, Satoru Mihara, Naomichi Abe

Proceedings Volume 1262, Advances in Resist Technology and Processing VII; (1990) https://doi.org/10.1117/12.20096
Event: Microlithography '90, 1990, San Jose, CA, United States

Abstract

We investigated dry-develop resist as the top layer in a bilayer system. The resist consisted of polyacetylene with silicon atoms, PTMDSO (poly 4,4,7,74etramethyl-4,7-disila- 2-octyne) as a base polymer, and a phenyl azide as a photosensitive addition agent. 0.30 pm line and space negative patterns were resolved, when the resist exposed using a KrF excimer laser stepper system was developed in the down stream of 02/CF4 plasma. The sensitivity was around 100 mJ/cm2 and the oxygen plasma resistance was about 50 times greater than that of novolak resist.

Citation Download Citation

Takushi Motoyama, Satoru Mihara, and Naomichi Abe "Dry development of the top imaging layer for bilayer system in the down stream of O2/CF4 plasma", Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); https://doi.org/10.1117/12.20096

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