Evaluation of aliphatic 2-diazoketones as photoactive compounds for deep-UV lithography

George Schwartzkopf; Kathleen B. Gabriel; John B. Covington

doi:10.1117/12.20100

1 June 1990 Evaluation of aliphatic 2-diazoketones as photoactive compounds for deep-UV lithography

George Schwartzkopf, Kathleen B. Gabriel, John B. Covington

Proceedings Volume 1262, Advances in Resist Technology and Processing VII; (1990) https://doi.org/10.1117/12.20100
Event: Microlithography '90, 1990, San Jose, CA, United States

Abstract

Aliphatic 2-diazoketones of various structural types were synthesized then screened as photoactive components of deep U V resists Several of the materials were readily photolyzed upon deep U.V. irradiation but also exhibited reasonable thermal stability. Representative resists incorporating these materials gave positive tone with metal ion containing developers and negative tone with metal ion free developers. Resist sensitivity was dependent on the frequency spectrum of the exposing deep U.V. light.

Citation Download Citation

George Schwartzkopf, Kathleen B. Gabriel, and John B. Covington "Evaluation of aliphatic 2-diazoketones as photoactive compounds for deep-UV lithography", Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); https://doi.org/10.1117/12.20100

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