Paper
1 June 1990 Image formation mechanism in PMMA-MAA antracene positive photoresist exposed by pulsed laser and kinetics of its development
Alexei L. Bogdanov, V. A. Nikitaev, Andrey B. Poljakov, V. E. Tukish, Kamil A. Valiev, Leonid V. Velikov, D. Yu. Zaroslov
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Abstract
A new resist composition based on PMMA-MAA copolymer with antracene additive was exposed by a single pulse of KrFexcimer laser (X =248 nm). Its contrast was found to exceed significantly the limit determined by light absorbtion. Studies of the development kinetics of the resist and corresponding theoretical reasoning justify the assumption of a thermal activated process (boiling of the residual dissolver).
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexei L. Bogdanov, V. A. Nikitaev, Andrey B. Poljakov, V. E. Tukish, Kamil A. Valiev, Leonid V. Velikov, and D. Yu. Zaroslov "Image formation mechanism in PMMA-MAA antracene positive photoresist exposed by pulsed laser and kinetics of its development", Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); https://doi.org/10.1117/12.20138
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KEYWORDS
Pulsed laser operation

Photoresist materials

Photoresist developing

Polymers

Molecules

Image acquisition

Photoresist processing

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