Silylation processes for 193-nm excimer laser lithography

Mark A. Hartney; Roderick R. Kunz; Daniel J. Ehrlich; David C. Shaver

doi:10.1117/12.20119

1 June 1990 Silylation processes for 193-nm excimer laser lithography

Mark A. Hartney, Roderick R. Kunz, Daniel J. Ehrlich, David C. Shaver

Proceedings Volume 1262, Advances in Resist Technology and Processing VII; (1990) https://doi.org/10.1117/12.20119
Event: Microlithography '90, 1990, San Jose, CA, United States

Abstract

A silylation process for novolac-based resins was developed which results in positive-tone imaging. This process is based on 193nminduced crosslinking followed by a low temperature silylation step. Novolac resin without diazoquinone additives may also be used as positive-tone resists. Typical conditions were exposure to dimethylsilyldimethylainine vapor at 10 Torr for 1 minute at 100 °C. This incorporates silicon in the upperniost 100 to 1000 nn of the film, depending on the resist. Etch selectivities in a 10 rnTorr oxygen reactive ion etching plasma with a bias voltage of -200 V were typically 30:1. Resolution below 0.3 m has been demonstrated with this technique.

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Mark A. Hartney, Roderick R. Kunz, Daniel J. Ehrlich, and David C. Shaver "Silylation processes for 193-nm excimer laser lithography", Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); https://doi.org/10.1117/12.20119

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