Paper
1 May 1990 Focused ion-beam-induced tungsten deposition for repair of clear defects on x-ray masks
Diane K. Stewart, Lewis A. Stern, Gordon Foss, Greg P. Hughes, Pradeep K. Govil
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Abstract
A 25 key focused Ga ion beam was used to induce deposition of tungsten on a gold absorber on boron nitride X-ray mask with submicron features to simulate the repair of clear defects. Tungsten was deposited to fill holes, extend lines and add missing features, such as isolated contacts and lines. Deposits were placed between features and made to cross over both gold and tungsten features to evaluate proximity effects. Series of tungsten depositions that varied in thickness were exposed to an X-ray source and transferred into resist. Contrast equivalent to or better than the gold absorber was achieved for tungsten that was thinner than the gold.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Diane K. Stewart, Lewis A. Stern, Gordon Foss, Greg P. Hughes, and Pradeep K. Govil "Focused ion-beam-induced tungsten deposition for repair of clear defects on x-ray masks", Proc. SPIE 1263, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX, (1 May 1990); https://doi.org/10.1117/12.20142
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CITATIONS
Cited by 9 scholarly publications.
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KEYWORDS
Tungsten

Gold

X-rays

Photomasks

X-ray technology

Ion beams

X-ray lithography

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