Simulation and experimental results in O.6-um lithography using an I-line stepper

Joachim J. Bauer; Wolfgang Mehr; Ulrich Glaubitz; H. Baborski; Norbert Haase; Jens-Ullrich Mueller

doi:10.1117/12.20222

1 June 1990 Simulation and experimental results in O.6-μm lithography using an I-line stepper

Joachim J. Bauer, Wolfgang Mehr, Ulrich Glaubitz, H. Baborski, Norbert Haase, Jens-Ullrich Mueller

Proceedings Volume 1264, Optical/Laser Microlithography III; (1990) https://doi.org/10.1117/12.20222
Event: Microlithography '90, 1990, San Jose, CA, United States

Abstract

In this paper a comparison of modeling and experimental results is given. It uses a new 5x iline projection aligner from CarlZeiss JENA (NA 0. 35). The spectral bandwidth is 11. 4 nm The photoresist (ORWO) was developed from Fotochemische Werke Berlin. The resistthickness is 1. 2 um. It was used a newly developed threedimensional lithography simulator. We have simulated and produced 0. 6 um lines and spaces. 1.

Citation Download Citation

Joachim J. Bauer, Wolfgang Mehr, Ulrich Glaubitz, H. Baborski, Norbert Haase, and Jens-Ullrich Mueller "Simulation and experimental results in O.6-μm lithography using an I-line stepper", Proc. SPIE 1264, Optical/Laser Microlithography III, (1 June 1990); https://doi.org/10.1117/12.20222

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