Simulation of scattering effects in photolithography

A. J. W. Tol; Graeme D. Maxwell; H. Paul Urbach; Robert Jan Visser

doi:10.1117/12.20223

1 June 1990 Simulation of scattering effects in photolithography

A. J. W. Tol, Graeme D. Maxwell, H. Paul Urbach, Robert Jan Visser

Proceedings Volume 1264, Optical/Laser Microlithography III; (1990) https://doi.org/10.1117/12.20223
Event: Microlithography '90, 1990, San Jose, CA, United States

Abstract

Using a new program based on Maxwell''s equations which computes the latent image of relative inhibitor concentration in two dimensions we have investigated notching effects in a resist layer on non-planar substrates and were able to understand line-narrowing effects which were experimentally observed. The program properly takes into account oblique propagation of light rays (in particular reflections from nonplanar interfaces) effects due to defocus and the partial coherence of the illumination. Thicknesses and layout of the underlying layers were varied in order to determine which parts of the structure give rise to the notching problems. The results which would be prohibitively laborious to obtain experimentally can be used to narrow down the range of possible solutions to the reflection problem. Some situations are however amenable to experimentation. In order to find the optimum resist for making the desired structures with minimum line narrowing over topography the A and B parameters of the resist were varied. The simulation results are compared to experimentally obtained profiles.

Citation Download Citation

A. J. W. Tol, Graeme D. Maxwell, H. Paul Urbach, and Robert Jan Visser "Simulation of scattering effects in photolithography", Proc. SPIE 1264, Optical/Laser Microlithography III, (1 June 1990); https://doi.org/10.1117/12.20223

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