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4 October 2023 Photonic double-mixing by UTC-PD-integrated HEMT for optical-to-sub-THz/THz carrier frequency down-conversion
A. Satou, T. Otsuji
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Proceedings Volume 12683, Terahertz Emitters, Receivers, and Applications XIV; 1268309 (2023) https://doi.org/10.1117/12.2676627
Event: SPIE Optical Engineering + Applications, 2023, San Diego, California, United States
Abstract
We review recent progress in the development of the UTC-PD-integrated HEMT carrier frequency down-converter as an optical-to-sub-terahertz (THz)/THz carrier frequency down-converter for use in the future beyond 5G wireless networks. First, we investigate the effect of the scaling of the UTC-PD active area on the double-mixing conversion gain. We show that the conversion gain monotonically increases as the active-area size is reduced, due to the suppression of the in-plane diffusion of photoelectrons in the UTC-PD absorption layer. Second, we examine the employment of intensified, low-noise subcarrier signal input to the device enabled by an optical injection-locking technique.
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(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.
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A. Satou and T. Otsuji "Photonic double-mixing by UTC-PD-integrated HEMT for optical-to-sub-THz/THz carrier frequency down-conversion", Proc. SPIE 12683, Terahertz Emitters, Receivers, and Applications XIV, 1268309 (4 October 2023); https://doi.org/10.1117/12.2676627
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KEYWORDS
Field effect transistors
Difference frequency generation
Optical networks
Wireless communications
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