Extreme ultraviolet (EUV) lithography has pushed the limits of optical lithography techniques, enabling patterning of highresolution feature sizes and driving innovation in the semiconductor industry. Traditional top-down lithography processes face challenges with EUV interference lithography, such as requiring precise incidence angles and specialized, expensive multilayer mirrors for nanostructure patterning. Colloidal nanosphere lithography offers an effective and inexpensive nearfield technique, utilizing self-assembled nanoparticles to create complex 2D and 3D nanostructures. However, existing work primarily uses UV lasers, limiting pattern resolution to above 100 nm. In this study, we propose using colloidal nanosphere lithography combined with a 30 nm wavelength EUV light source to pattern periodic geometric patterns. We describe the proposed system, which consists of a high harmonic generation source pumped by an ultrafast laser at wavelength of 30 nm. The beam shapes and characteristics are characterized and presented. Initial results demonstrate successful patterning using the colloidal assembly serves as a mask, achieving complex geometric patterns with sub-50 nm feature sizes. This work explores a low-cost and scalable approach to studying EUV light interaction through colloidal nanosphere assemblies for 3D nanostructure patterning.
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