In EUV lithography, resolution enhancement techniques are applied for manufacturing and also studied actively to improve resolution. Among them, PSM is one of the key technique to improve the resolution limit in the conventional lithography. In this study, we investigated the novel EUV absorber material regarding to imaging properties and patterning process. In simulation tool PROLITH, the reflectivity of novel absorber material PSM was about 9%. As a result, this PSM structure shows better normalized image log slope(NILS) and image contrast. In addition, new PSM structure shows better process friendly properties such as etch rate and PSM profile compared to the conventional Rubased PSM that is currently being actively studied.
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