Paper
6 August 2023 Study on the effect of double-trench ridge waveguide structure on output characteristics of semiconductor FP laser
Zhiyuan Zhang, Yaobin Li, Weinian Yan, Pan Fu, Yiyang Xie, Qiang Kan
Author Affiliations +
Proceedings Volume 12781, International Conference on Optoelectronic Information and Functional Materials (OIFM 2023); 1278130 (2023) https://doi.org/10.1117/12.2686720
Event: 2023 International Conference on Optoelectronic Information and Functional Materials (OIFM 2023), 2023, Guangzhou, JS, China
Abstract
Semiconductor lasers with good fundamental transverse mode stability have important applications in optical communications, light sources, biomedical and other fields. For Fabry-Perot (FP) lasers, lateral mode control is an important issue. In this paper, the influence of the side double-trench ridge waveguide structure of the semiconductor FP laser on the output mode characteristics is analyzed theoretically. The device is modeled and calculated using matlab software. FP laser with different ridge width and trench width are designed and fabricated using the double-trench ridge waveguide structure. The influence of the leakage loss of the double-trench waveguide structure on the mode output characteristics is analyzed.
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhiyuan Zhang, Yaobin Li, Weinian Yan, Pan Fu, Yiyang Xie, and Qiang Kan "Study on the effect of double-trench ridge waveguide structure on output characteristics of semiconductor FP laser", Proc. SPIE 12781, International Conference on Optoelectronic Information and Functional Materials (OIFM 2023), 1278130 (6 August 2023); https://doi.org/10.1117/12.2686720
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Waveguides

Semiconductor lasers

Refractive index

Laser stabilization

Semiconductors

Beam divergence

Laser damage threshold

Back to Top