Internal redistribution of the electric field and optical nonlinearity in p-i-n heterostructure by electroabsorbtion of light

Dmitry M. Boutoussov; G. G. Gotsadze; Boris S. Ryvkin; Robert A. Suris

doi:10.1117/12.20662

1 August 1990 Internal redistribution of the electric field and optical nonlinearity in p-i-n heterostructure by electroabsorbtion of light

Dmitry M. Boutoussov, G. G. Gotsadze, Boris S. Ryvkin, Robert A. Suris

Author Affiliations +

Proceedings Volume 1280, High Speed Phenomena in Photonic Materials and Optical Bistability; (1990) https://doi.org/10.1117/12.20662
Event: The International Congress on Optical Science and Engineering, 1990, The Hague, Netherlands

Abstract

The new type of seif-electrooptic--effect--device is presented. Optical nonlinearity and bistability due to the internal electric field redistribution in nonuniform i-layer of double GaAs/A1GaAs PIN heterostructure are achieved.

Citation Download Citation

Dmitry M. Boutoussov, G. G. Gotsadze, Boris S. Ryvkin, and Robert A. Suris "Internal redistribution of the electric field and optical nonlinearity in p-i-n heterostructure by electroabsorbtion of light", Proc. SPIE 1280, High Speed Phenomena in Photonic Materials and Optical Bistability, (1 August 1990); https://doi.org/10.1117/12.20662

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