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1 August 1990 Internal redistribution of the electric field and optical nonlinearity in p-i-n heterostructure by electroabsorbtion of light
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Proceedings Volume 1280, High Speed Phenomena in Photonic Materials and Optical Bistability; (1990) https://doi.org/10.1117/12.20662
Event: The International Congress on Optical Science and Engineering, 1990, The Hague, Netherlands
Abstract
The new type of seif-electrooptic--effect--device is presented. Optical nonlinearity and bistability due to the internal electric field redistribution in nonuniform i-layer of double GaAs/A1GaAs PIN heterostructure are achieved.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dmitry M. Boutoussov, G. G. Gotsadze, Boris S. Ryvkin, and Robert A. Suris "Internal redistribution of the electric field and optical nonlinearity in p-i-n heterostructure by electroabsorbtion of light", Proc. SPIE 1280, High Speed Phenomena in Photonic Materials and Optical Bistability, (1 August 1990); https://doi.org/10.1117/12.20662
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