Internal redistribution of the electric field and optical nonlinearity in p-i-n heterostructure by electroabsorbtion of light

Dmitry M. Boutoussov; G. G. Gotsadze; Boris S. Ryvkin; Robert A. Suris

doi:10.1117/12.20662

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1 August 1990 Internal redistribution of the electric field and optical nonlinearity in p-i-n heterostructure by electroabsorbtion of light

Dmitry M. Boutoussov, G. G. Gotsadze, Boris S. Ryvkin, Robert A. Suris

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Proceedings Volume 1280, High Speed Phenomena in Photonic Materials and Optical Bistability; (1990) https://doi.org/10.1117/12.20662
Event: The International Congress on Optical Science and Engineering, 1990, The Hague, Netherlands

Abstract

The new type of seif-electrooptic--effect--device is presented. Optical nonlinearity and bistability due to the internal electric field redistribution in nonuniform i-layer of double GaAs/A1GaAs PIN heterostructure are achieved.

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Dmitry M. Boutoussov, G. G. Gotsadze, Boris S. Ryvkin, and Robert A. Suris "Internal redistribution of the electric field and optical nonlinearity in p-i-n heterostructure by electroabsorbtion of light", Proc. SPIE 1280, High Speed Phenomena in Photonic Materials and Optical Bistability, (1 August 1990); https://doi.org/10.1117/12.20662

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