Photoconductance investigations of single period and multilayer PbTe n-i-p-is

Josef Oswald; Manfred Pippan; Beate Tranta; Guenther E. Bauer

doi:10.1117/12.20646

1 August 1990 Photoconductance investigations of single-period and multilayer PbTe n-i-p-is

Josef Oswald, Manfred Pippan, Beate Tranta, Guenther E. Bauer

Proceedings Volume 1280, High Speed Phenomena in Photonic Materials and Optical Bistability; (1990) https://doi.org/10.1117/12.20646
Event: The International Congress on Optical Science and Engineering, 1990, The Hague, Netherlands

Abstract

Single period nipis (i.e. pnp-structures) turn out to be interesting elements for the design of arbitrary nipi-potentials. In addition, the possibility of applying selective contacts to n-type layers allows the use of p-type buffer layers on either side of the pnp-structure in order to screen band bending effects both at the buffer interface and at the surface. From transient photoconductivity experiments typical lifetimes result up to the millisecond time regime (i.e. about iO to iO times the bulk lifetimes). The amplitude of the photoconductive response cannot be attributed to simply an equivalent change of the electron density in the selectively contacted n-layer. This fact is confirmed by Photo Hall experiments. The enhancement of the response can be explained in terms of the special characteristics of the narrow gap material PbTe. Additional tuning of the electron densities via background illumination is performed in order to control the lifetimes. The resulting trends are well understood if the modification of the nipi-potential caused by excess carriers is taken into account. In a simple model the role of the background radiation is explained.

Citation Download Citation

Josef Oswald, Manfred Pippan, Beate Tranta, and Guenther E. Bauer "Photoconductance investigations of single-period and multilayer PbTe n-i-p-is", Proc. SPIE 1280, High Speed Phenomena in Photonic Materials and Optical Bistability, (1 August 1990); https://doi.org/10.1117/12.20646

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