Microfabrication below 10 nm

B. P. Van der Gaag; Axel Scherer; Lawrence M. Schiavone

doi:10.1117/12.20785

1 October 1990 Microfabrication below 10 nm

B. P. Van der Gaag, Axel Scherer, Lawrence M. Schiavone

Proceedings Volume 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors; (1990) https://doi.org/10.1117/12.20785
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

We describe a new electron beam lithography method for producing structures with lateral sizes smaller than the incident beam diameter. These patterns are transferred into GaAs/A1GaAs, InGaAs/GaAs and InGaAs/InP quantum well heterostructures using chemically assisted ion beam etching, thereby forming uniform arrays of pillars with lateral dimensions at or below 10 nm. To correlate the sizes of such structures with our exposure and development conditions, reflection electron microscopy observations are used.

Citation Download Citation

B. P. Van der Gaag, Axel Scherer, and Lawrence M. Schiavone "Microfabrication below 10 nm", Proc. SPIE 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors, (1 October 1990); https://doi.org/10.1117/12.20785

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