Growth of InAs on GaAs (001) by migration-enhanced epitaxy

Bing Liang; K. Ha; Jing Jean Zhang; Patrick T. Chin; Charles W. Tu

doi:10.1117/12.20813

1 October 1990 Growth of InAs on GaAs (001) by migration-enhanced epitaxy

Bing Liang, K. Ha, Jing Jean Zhang, Patrick T. Chin, Charles W. Tu

Proceedings Volume 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors; (1990) https://doi.org/10.1117/12.20813
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

Growth of InAs epitaxial layers on GaAs (001 ) by migration-enhanced epitaxy (MEE) and molecular beam epitaxy (MBE) has been studied. Reflection high-energy-electron diffraction (RHEED) patterns were studied, and persistent RHEED intensity oscillations were observed during MEE growth of InAs. The dependence of RHEED oscillation on MEE growth parameters is discussed. InAs layers grown by MEE at low substrate temperature exhibit comparable quality as MBE layers grown at higher substrate temperature.

Citation Download Citation

Bing Liang, K. Ha, Jing Jean Zhang, Patrick T. Chin, and Charles W. Tu "Growth of InAs on GaAs (001) by migration-enhanced epitaxy", Proc. SPIE 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors, (1 October 1990); https://doi.org/10.1117/12.20813

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