Optical techniques for in-situ analysis and control of semiconductor crystal growth

David E. Aspnes

doi:10.1117/12.20801

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1 October 1990 Optical techniques for in-situ analysis and control of semiconductor crystal growth

David E. Aspnes

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Proceedings Volume 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors; (1990) https://doi.org/10.1117/12.20801
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

A variety of optical techniques are now available for studying surface processes and for monitoring layer thicknesses and compositions during semiconductor crystal growth by molecular beam epitaxy (MBE), organometallic chemical vapor deposition (OMCVD), and related techniques. Surface-sensitive approaches include reflectancedifference spectroscopy (RDS), second-harmonic generation (SHG), and laser light scattering (LLS). Bulk approaches include spectroellipsometry (SE) and spectroreflectometry (SR). I discuss representative examples, including the use of SE to determine thicknesses and compositions of AlGai_As layers on GaAs during crystal growth by organometallic molecular beam epitaxy (OMMBE), the use of RDS to measure surface dielectric anisotropy (SDA) spectra of various (001) GaAs surfaces relevant to crystal growth by MBE, and the use of RDS to establish kinetic limits to growth on (001) GaAs by atmospheric-pressure OMCVD.

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David E. Aspnes "Optical techniques for in-situ analysis and control of semiconductor crystal growth", Proc. SPIE 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors, (1 October 1990); https://doi.org/10.1117/12.20801

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