Spontaneous selective epitaxial growth of compositionally modulated AlGaAs with an orientation-dependent band gap

Michael E. Hoenk; Kerry J. Vahala

doi:10.1117/12.20819

1 October 1990 Spontaneous selective epitaxial growth of compositionally modulated AlGaAs with an orientation-dependent band gap

Michael E. Hoenk, Kerry J. Vahala

Author Affiliations +

Proceedings Volume 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors; (1990) https://doi.org/10.1117/12.20819
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

We have demonstrated selective epitaxial growth of A1Gai_As, with an abrupt transition in the bandgap lateral to the growth direction. Spontaneous compositional modulation, with an associated reduction in the effective bandgap, occurs in AlGaAs grown by molecular beam epitaxy on the sides of grooves in a GaAs substrate. The bandgap is observed to be dependent on the groove orientation. Possible mechanisms for the orientation dependent growth are discussed.

Citation Download Citation

Michael E. Hoenk and Kerry J. Vahala "Spontaneous selective epitaxial growth of compositionally modulated AlGaAs with an orientation-dependent band gap", Proc. SPIE 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors, (1 October 1990); https://doi.org/10.1117/12.20819

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