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1 August 1990 Determination of electronic structure of Ge-Si nanostructures by electroreflectance spectroscopy
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Proceedings Volume 1286, Modulation Spectroscopy; (1990)
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Extensive measurements and theoretical calculations have provided strong evidence for the creation of direct bandgap superlattice structures from indirect bandgap Ge and Si. Much of the experimental evidence for this conclusion is drawn from electroreflectance measurements. Interpretation of this experiment begins with the standard lineshape fitting analysis, but it is complicated by local electric fields and interference effects. We will discuss these effects and how they can be separated from properties intrinsic to the electronic structure.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Thomas P. Pearsall "Determination of electronic structure of Ge-Si nanostructures by electroreflectance spectroscopy", Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990);

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